v rrm = 20 v - 100 v i f = 400 a features ? high surge capability three tower package ? types up to 100 v v rrm ? isolation type package parameter symbol mbrt40045 (r) mbrt40060 (r) unit re p etitive p eak reverse volta g e v rrm 45 60 v silicon power schottk y diode mbrt40045 thru mbrt400100r mbrt400100 (r) 80 mbrt40080 (r) maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) conditions 100 pp g rms reverse voltage v rms 32 42 v dc blocking voltage v dc 45 60 v continuous forward current i f 400 400 a operating temperature t j -40 to 150 -40 to 150 c storage temperature t stg -40 to 175 -40 to 175 c parameter symbol mbrt40045 (r) mbrt40060(r) unit diode forward voltage 0.75 0.8 11 20 20 thermal characteristics thermal resistance, junction - case r thjc 0.14 0.14 c/w electrical characteristics, at tj = 25 c, unless otherwise specified surge non-repetitive forward current, half sine wave i f,sm reverse current i r v f 20 a 3000 v r = 20 v, t j = 25 c i f = 200 a, t j = 25 c t c 100 c conditions 57 3000 3000 -40 to 175 400 400 3000 -40 to 175 mbrt400100 (r) 11 mbrt40080 (r) 0.14 v r = 20 v, t j = 125 c 0.14 0.88 0.88 20 ma v -40 to 150 -40 to 150 t c = 25 c, t p = 8.3 m s 70 100 80 www.genesicsemi.com 1 free datasheet http:///
mbrt40045 thru mbrt400100r www.genesicsemi.com 2 free datasheet http:///
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